GPD has been a manufacturer of power and high speed Germanium transistors and diodes since 1973 and a manufacturer of infrared photodetectors since 1985. They offer Ge, p-n, APD and InGaAs p-i-n high speed and large area photodetectors for radiation detection and telecommunication applications. GPD maintains an inspection system in accordance with MIL-I-45208. Photodiodes are subjected to Telcordia testing requirements (TA-NWT-00093), MIL-STD-883 test methods and/or customer specifications.
? 1973 Founded as Germanium Power Devices Corp.
? 1980 Introduced Ge pn Detector Products
? 1993 Introduced InGaAs Detector Products
? 2000 Relocated to Salem, New Hampshire- Doubling Capacity
? 2005 Introduced Extended-Wavelength InGaAs Detector Products
? 2012 Introduced Customizable 2-color Detectors
? 2014 Introduced Quadrant and Two-Color Photodiodes