Features
1• VCC operation of 2.3 V to 3.6 V
• Switch I/Os accept signals up to 5.5 V
• 1.8-V compatible control-pin inputs
• Low-power mode when OE Is disabled (1 μA)
• rON = 6 Ω maximum
• ΔrON = 0.2 Ω typical
• Cio(on) = 7 pF maximum
• Low power consumption (30 μA maximum)
• ESD performance tested per JESD 22
– 7000-V human body model
(A114-B, Class II)
– 1000-V charged-device model (C101)
• ESD performance I/O port to GND
– 12-kV human body model (A114-B, Class II)
– ±7-kV contact discharge (IEC 61000-4-2)
• High bandwidth (1 GHz typical)
Description
The TS3USB221E is a high-bandwidth switch
specially designed for the switching of high-speed
USB 2.0 signals in handset and consumer
applications, such as cell phones, digital cameras,
and notebooks with hubs or controllers with limited
USB I/Os. The wide bandwidth (1 GHz) of this switch
allows signals to pass with minimum edge and phase
distortion. The device multiplexes differential outputs
from a USB host device to one of two corresponding
outputs. The switch is bidirectional and offers little or
no attenuation of the high-speed signals at the
outputs. The TS3USB221E is designed for low bit-tobit skew and high channel-to-channel noise isolation,
and is compatible with various standards, such as
high-speed USB 2.0 (480 Mbps).
The TS3USB221E integrates ESD protection cells on
all pins, is available in a SON package (3 mm ×
3 mm) as well as in a tiny μQFN package (2 mm ×
1.5 mm) and is characterized over the free-air
temperature range from –40°C to 85°C.
